2N5210 TO-92 General Purpose Amplifier This device desi

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2N5210 TO-92 General Purpose Amplifier This device desi

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2N5210
2N5210
TO-92
General Purpose Amplifier
This device designed noise, high gain, general purpose amplifier applications collector currents from Sourced from Process 2N5088 characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
25°C unless otherwise noted
Parameter
Value
+150
Units
Operating Storage Junction Temperature Range
*These ratings limiting values above which serviceability semiconductor device impaired.
NOTES: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
Thermal Characteristics
Symbol
25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient
2N5210 83.3
Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N5210
General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
CHARACTERISTICS
V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
CHARACTERISTICS
Current Gain
VCE( sat) VBE(
Collector-Emitter Saturation Voltage Base-Emitter Voltage
0.85
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure µA,VCE 15.7
*Pulse Test: Pulse Width Duty Cycle 2.0%

2N5210 TO-92 General Purpose Amplifier This device desi

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