SuperSOTTM-8 P-Channel enhancement mode power field effect transistors
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NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast high-side switching, in-line power loss needed very small outline surface mount package.
Features
-2.7 RDS(ON) 0.07 -4.5 RDS(ON) 0.095 -2.7 Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings 25°C unless otherwise noted
Symbol VDSS VGSS TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note
NDH8304P
-2.7
Units
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
1997 Fairchild Semiconductor Corporation
NDH8304P Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units
CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, 125°C Static Drain-Source On-Resistance -4.5 -2.7 125°C -2.7 -2.3 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current -4.5 -2.7 Forward Transconductance -2.7 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance -0.4 -0.3 -0.7 -0.5 0.061 0.087 0.082 -100
CHARACTERISTICS (Note Gate Threshold Voltage -0.8 0.07 0.125 0.095
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -2.7 -4.5 -4.5 RGEN
NDH8304P Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions -0.67
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -0.67 -0.7
-1.2
JA(t
JC+RC
RDS(ON
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 156oC/W when mounted 0.0025 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8304P Rev.C
Typical Electrical Characteristics
=-4.5V
-3.5 -3.0 -2.7 -2.5
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE CURRENT
-2.0V
-2.0
-2.5
-2.7 -3.0 -3.5 -4.5
-1.5
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
-2.7A
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
-4.5V
-4.5V 125°C
RDS(on) NORMALIZED
DS(ON), NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
-55°C
GATE-SOURCE THRESHOLD VOLTAGE
25°C 125°C
GS(th), NORMALIZED
-250µA
DRAIN CURRENT
-0.5
-1.5 GATE SOURCE VOLTAGE
-2.5
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH8304P Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
-250µA
1.08 REVERSE DRAIN CURRENT 1.06 1.04 1.02 0.98 0.96 0.94
125°C
NORMALIZED
25°C
-55°C
0.01
0.001
JUNCTION TEMPERATURE (°C)
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
2500
GATE-SOURCE VOLTAGE 1500 1000 CAPACITANCE (pF)
-2.7A
-10V -15V
Ciss
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
d(on)
d(off)
VOUT
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH8304P Rev.C
Typical Electrical Thermal Characteristics
TRANSCONDUCTANCE (SIEMENS)
-4.5V
-55°C
DRAIN CURRENT
25°C
125°C
0.05
-4.5V SINGLE PULSE Note
25°C
DRAIN CURRENT
0.01
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
0.05 0.02
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Single Pulse
0.01
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note .Transient thermal response will change depending circuit board design.
NDH8304P Rev.C
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