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Process: Metal: 0.5% 0.8% DS1808 Passivation w/Nov TEOS


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Reliability Report:
Process: Metal:
0.5% 0.8%
DS1808
Passivation w/Nov TEOS Oxide-Nitride
5.0um, UVNd, UVPd ,N+ESD,TEOS Spacer,
Gate Thickness:
Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature Voltage Field Ambient Temperature Voltage
Tuse: Vuse:
Volts
Count: Assembly: Package: Body Size:
(Amkor, SOIC 150x1.4
DESCRIPTION
HIGH VOLTAGE LIFE
VEHICLE
DS1808 DS1808
DATE CODE
0133 0133
CONDITION
125C, (PSA) +13.2 125C, (PSA) +13.2
READPOINT
HOURS HOURS
QUANTITY
FAILS FILE DEVICE
452720 24899612
HIGH TEMPERATURE OPERATING LIFE
FAILURE RATE
DEVICE HRS: MTBF (yrs):
2.54E+07 3158
TOTALS: FITs:
PRODUCT
DS1808
SIZE
SIZE
Transistors
1700
Thursday, 2002

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