FEATURES Power dissipation PCM: Collector current ICM: (BR) CBO: 0.15
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TO-92 Plastic-Encapsulate Transistors
FEATURES Power dissipation PCM: Collector current ICM: (BR) CBO: 0.15 Collector-base voltage Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter voltage breakdown Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE(sat) VBE(sat) VCE=6V, IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=10mA, VCB=10V, IE=0, f=1MHZ VCE=6V, IC=0.1mA Rg=10k, f=1kMHZ
TRANSISTOR (NPN) TO-92
(Tamb=25)
EMITTER
COLLECTOR
BASE
unless otherwise specified)
Test conditions UNIT
Ic=1mA, IE=0 IC=100uA IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VCE=45V VEB=5V, IC=0 VCE=6V, IC=1mA
Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
CLASSIFICATION hFE(1)
Rank Range 70-140 120-240 200-400 350-700
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