RN2110F,RN2111F With built-in bias resistors Simplify circuit des
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RN2110F,RN2111F
RN2110F,RN2111F
With built-in bias resistors Simplify circuit design Reduce quantity parts manufacturing process Complementary RN1110F, RN1111F Unit
Equivalent Circuit
Maximum Ratings 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Tstg Rating -100 -55~150 Unit
JEDEC EIAJ TOSHIBA Weight 2.3mg
2-2HA1A
000707EAA1
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2001-02-08
RN2110F,RN2111F
Electrical Characteristics 25°C)
Characteristic Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN2110F RN2111F Symbol ICBO IEBO (sat) Test Circuit Test Condition -50V, -5V, -5V, -1mA -5mA, -0.25mA -10V, -5mA -10V, 1MHz 3.29 Typ. -0.1 -100 -100 -0.3 6.11 Unit
2001-02-08
RN2110F,RN2111F
2001-02-08
RN2110F,RN2111F
Type Name Marking
RN2110F
RN2111F
2001-02-08
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