TOSHIBA Field Effect Transistor Silicon Channel Type HN1L03FU

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TOSHIBA Field Effect Transistor Silicon Channel Type HN1L03FU

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HN1L03FU
TOSHIBA Field Effect Transistor Silicon Channel Type
HN1L03FU
High Speed Switching Applications Analog Switch Applications
Unit
common
threshold voltage 0.8~2.5V High speed Small package =-0.5~-1.5V
Maximum Ratings 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Symbol VGSS Rating Unit
Maximum Ratings 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Symbol VGSS Rating Unit
JEDEC EIAJ TOSHIBA Weight: 6.8mg
2-2J1C
Marking
Maximum Ratings (Q1, Common) 25°C)
Characteristic Drain power dissipation Channel temperature Storage temperature range Symbol Tstg Rating -55~150 Unit
Equivalent Circuit
(Top View)
Total rating
000707EAA2
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc.
2001-01-23
HN1L03FU
Electrical Characteristics 25°C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition 10V, Typ. 0.11 0.15 Unit
(BR) 100µA, IDSS |Yfs| (ON) Ciss Crss Coss 50V, 0.1mA 10mA 10mA, 4.0V 1MHz 1MHz 1MHz 10mA, 0~4.0V 10mA, 0~4.0V
Electrical Characteristics 25°C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition -7V, -0.5 Typ. 10.4 0.15 0.13 -1.5 Unit
(BR) -100µA, IDSS |Yfs| (ON) Ciss Crss Coss -20V, -3V, -0.1mA -3V, -10mA -10mA, -2.5V -3V, 1MHz -3V, 1MHz -3V, 1MHz -3V, -10mA, 0~-2.5V -3V, -10mA, 0~-2.5V
000707EAA2
TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2001-01-23
HN1L03FU
(Nch FET)
Switching Time Test Circuit
2001-01-23
HN1L03FU
(Nch FET)
2001-01-23
HN1L03FU
(Pch FET)
Switching Time Test Circuit
2001-01-23
HN1L03FU
(Pch FET)
(Q1, common)
2001-01-23

TOSHIBA Field Effect Transistor Silicon Channel Type HN1L03FU

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