HN1K05FU Portable Devices High Speed Switching Applications Inter

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HN1K05FU Portable Devices High Speed Switching Applications Inter

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HN1K05FU
HN1K05FU
Portable Devices High Speed Switching Applications Interface Applications
High input impedance extremely drive current. possible drive directly low-voltage CMOS. Suitable high-density mounting because compact package.
Maximum Ratings 25°C) (Q1, common)
Characteristics Drain-source voltage Gate-source voltage drain current Drain power dissipation Channel temperature Storage temperature range Symbol VGSS (Note) Tstg Rating Unit
Note: TOTAL rating
000707EAA1
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2000-08-28
HN1K05FU
Electrical Characteristics 25°C) (Q1, common)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source resistance Drain-Source resistance Drain-Source resistance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS (BR) IDSS (ON) (ON) (ON) Ciss Crss Coss Switching time toff Test Condition Typ. 0.35 Unit
Equivalent Circuit (top view)
Marking
(Q1, common)
Switching Time Test Circuit
Test circuit
D.U. VIN: (Zout Common Source 25°C
toff
VOUT
(ON)
2000-08-28
HN1K05FU
(Q1, common)
Common source Common source 25°C
(low voltage region)
(mA)
(mA)
Drain current
Drain current
Drain-source voltage
Drain-source voltage
Common source 100°C -25°C Common source 25°C
(ON)
Drain-source resistance (ON)
(mA)
25°C
Drain current
0.01
Gate-source voltage
Drain current
(mA)
(ON)
Common source 1000
Common source 25°C
Forward transfer admittance (mS)
Drain-source resistance (ON)
1000
Ambient temperature
(°C)
Drain current
(mA)
2000-08-28
HN1K05FU
(Q1, common)
Common source 10000
Common source
(pF)
(ns)
25°C
25°C 1000 toff
Ciss
Switching time
Capacitance
Coss
Crss
Drain-source voltage
Drain current
(mA)
Drain power dissipation (mW)
Ambient temperature
(°C)
TOTAL rating
2000-08-28

HN1K05FU Portable Devices High Speed Switching Applications Inter

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