HN1K02FU High Speed Switching Applications Analog Switch Applicat
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HN1K02FU
HN1K02FU
High Speed Switching Applications Analog Switch Applications
Unit
gate drive. threshold voltage: 0.5V~1.5V High speed Enhancement-mode Small package
Maximum Ratings 25°C) (Q1, Common)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VGSS Tstg Rating -55~150 Unit
JEDEC EIAJ TOSHIBA Weight: 6.8mg
2-2J1C
Total rating
000707EAA1
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2001-01-23
HN1K02FU
Electrical Characteristics 25°C) (Q1, Common)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition 10V, Min. Typ. 0.14 0.14 Max. Unit
(BR) 100µA, IDSS |Yfs| (ON) Ciss Crss Coss 20V, 0.1mA 10mA 10mA, 2.5V 1MHz 1MHz 1MHz 10mA, 0~2.5V 10mA, 0~2.5V
Equivalent Circuit (Top View)
Marking
2001-01-23
HN1K02FU
(Q1,Q2 Common)
Switching Time Test Circuit
2001-01-23
HN1K02FU
(Q1,Q2 Common)
2001-01-23
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