HN1D03FU Ultra High Speed Switching Application Unit Built a
|
|
|
Top Searches for this datasheet
HN1D03FU
HN1D03FU
Ultra High Speed Switching Application
Unit Built anode common cathode common. Unit forward voltage Small total capacitance Unit forward voltage Small total capacitance 0.90V (typ.) 0.9pF (typ.) 0.92V (typ.) 2.2pF (typ.)
Fast reverse recovery time 1.6ns (typ.)
Fast reverse recovery time 1.6ns (typ.)
Unit Unit Common Maximum Ratings 25°C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol IFSM Tstg Rating 240* -55~125 Unit
JEDEC EIAJ TOSHIBA Weight: 6.2mg
1-2T1D
This Maximum Ratings single diode Q4). case using Unit Unit independently simultaneously, Maximum Ratings diode single diode one.
Marking
Assignment (Top View)
961001EAA2
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, observe standards safety, avoid situations which malfunction failure TOSHIBA product could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent products specifications. Also, please keep mind precautions conditions forth TOSHIBA Semiconductor Reliability Handbook. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2000-09-14
HN1D03FU
Fig.1 Reverse Recovery Time (trr) Test Circuit
Unit Electrical Characteristics (Q1, Common) 25°C)
Characteristic Symbol Forward voltage Reverse current Total capacitance Reverse recovery time Test Circuit Test Condition 10mA 100mA 1MHz =10mA (fig.1) Typ. 0.60 0.72 0.90 1.20 0.10 0.50 Unit
Unit Electrical Characteristics (Q3, Common) 25°C)
Characteristic Symbol Forward voltage Reverse current Total capacitance Reverse recovery time Test Circuit Test Condition 10mA 100mA 1MHz =10mA (fig.1) Typ. 0.61 0.74 0.92 2.20 1.60 1.20 0.10 0.50 Unit
2000-09-14
HN1D03FU
2000-09-14
HN1D03FU
2000-09-14
Other recent searches
TMP86C807NG - TMP86C807NG TMP86C807NG Datasheet
Si3456BDV - Si3456BDV Si3456BDV Datasheet
RA78K4 - RA78K4 RA78K4 Datasheet
Structured - Structured Structured Datasheet
Assembler - Assembler Assembler Datasheet
Preprocessor - Preprocessor Preprocessor Datasheet
MPDI041 - MPDI041 MPDI041 Datasheet
I27134 - I27134 I27134 Datasheet
HCNW2201 - HCNW2201 HCNW2201 Datasheet
HCNW2211 - HCNW2211 HCNW2211 Datasheet
HCNW22XX - HCNW22XX HCNW22XX Datasheet
HCPL0211 - HCPL0211 HCPL0211 Datasheet
Delta39KTM - Delta39KTM Delta39KTM Datasheet
CDLE-420-146 - CDLE-420-146 CDLE-420-146 Datasheet
ADSP-21mod970-110 - ADSP-21mod970-110 ADSP-21mod970-110 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
