HN1D03F Ultra High Speed Switching Application Unit Built an

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HN1D03F Ultra High Speed Switching Application Unit Built an

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HN1D03F
HN1D03F
Ultra High Speed Switching Application
Unit Built anode common cathode common. Unit forward voltage Small total capacitance Unit forward voltage Small total capacitance 0.90V (typ.) 0.9pF (typ.) 0.92V (typ.) 2.2pF (typ.)
Fast reverse recovery time 1.6ns (typ.)
Fast reverse recovery time 1.6ns (typ.)
Unit Unit Common Maximum Ratings 25°C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Symbol IFSM Tstg Rating -55~125 Unit
JEDEC EIAJ TOSHIBA Weight: 0.015g
SC-74
This Maximum Ratings single diode Q4). case using Unit Unit independently simultaneously, Maximum Ratings diode single diode one.
Marking
Assignment (Top View)
961001EAA2
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, observe standards safety, avoid situations which malfunction failure TOSHIBA product could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent products specifications. Also, please keep mind precautions conditions forth TOSHIBA Semiconductor Reliability Handbook.
2000-09-14
HN1D03F
Fig.1 Reverse Recovery Time (trr) Test Circuit
Unit Electrical Characteristics (Q1, Common) 25°C)
Characteristic Symbol Forward voltage Reverse current Total capacitance Reverse recovery time Test Circuit Test Condition 10mA 100mA 1MHz 10mA (fig.1) Typ. 0.60 0.72 0.90 1.20 Unit
Unit Electrical Characteristics (Q3, Common) 25°C)
Characteristic Symbol Forward voltage Reverse current Total capacitance Reverse recovery time Test Circuit Test Condition 10mA 100mA 1MHz 10mA (fig.1) Typ. 0.61 0.74 0.92 1.20 Unit
961001EAA2'
information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2000-09-14
HN1D03F
2000-09-14

HN1D03F Ultra High Speed Switching Application Unit Built an

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