Toshiba developed 2500V-1000A insulated-gate bipolar transistor (IGBT)
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Toshiba developed 2500V-1000A insulated-gate bipolar transistor (IGBT) product. product offers longer lifetime improved reliability, features flat compression-bonded encapsulation package, World first. suitable high-power high-voltage applications. Toshiba developed unique assembly method which allows manufacture flat compression-bonded encapsulation packages IGBTs high power voltage applications. such applications, module assembly been conventional assembly method until now. product eliminates bonding wire soldering required module assembly. expected deliver long life high reliability. This IGBT intended inverters which control motors wide variety applications. These range from motors conditioners which require relatively current voltage, motors driving electric train which need high current voltage. Compared thyristors with same functions, IGBTs offer high switching speed fast response, giving greater control sensitivity reducing motor noise. Because these features, demand IGBTs increasing high-power high-voltage applications where thyristors currently used. applications related social infrastructure, such emergency response services, where high reliability required, best available packaging method compression-bonded encapsulation, which does bonding wire soldering.
Features
electrical connections compression-bonded, will withstand thermal fatigue very well. When IGBTs connected series, electrical safety assured, even electrical breakdown occurs inside device that shorted. hermetically sealed ceramic-and-metal package allows device immersed coolant fluid efficient cooling.
Package Dimension
Depth -(2)
-(1)
Gate cable
Equivalent Circuit
-(1) Primary emitter -(2) Auxiliary emitter Collector Gate
Collector
Emitter
(Unit: Gate
Technical specification Maximum Ratings
Characteristic Collector-Emitter voltage Gate-Emitter voltage Collector current Forward current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Mounting Force Symbol VCES VGES Tstg Rating 2500 Unit
1000 2000 1000 2000 5550 -20~125 -40~125 31.5±3.2
Electrical Characteristics
Characteristic Collector cut-off current Gate-Emitter cut-off voltage Collector-Emitter Saturation voltage Input Capacitance Rise time Switching Time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Transistor part Thermal Resistance Diode part Rth(j-f) Rth(j-f) Symbol ICES VGE(off) VCE(sat) Cies toff Test condition VCE=2500V, VGE=0V VCE=5V, IC=1A IC=1000A, VGE=15V VCE=10V, VGE=0V, f=1MHz Inductive load, VCC=1500V, IC=1000A, VGG=±15V, RG=5 IF=1000A, VGE=0V IF=1000A, VGE=-15V, dt=2000A °C/kW °C/kW Typ. Unit
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information contained herein subject change without notice. information contained herein presented only guide applications products. responsibility assumed TOSHIBA infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights TOSHIBA others. TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, observe standards safety, avoid situations which malfunction failure TOSHIBA product could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent products specifications. Also, please keep mind precautions conditions forth TOSHIBA Semiconductor Reliability Handbook.
International Operations-Electronic Components
1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-01, Japan Tel:(03)3457-3495 Fax: (03)5444-9431 Telex: J22587
©1997 TOSHIBA CORPORATION Printed Japan
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