KaLNA3S.04R*** MMIC Features Noise N.F. High Gain Gain (min)

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

KaLNA3S.04R*** MMIC Features Noise N.F. High Gain Gain (min)

Datasheet Thumbnail

Top Searches for this datasheet

Band Noise Amplifier
KaLNA3S.04R***
MMIC Features
Noise N.F. High Gain Gain (min) Frequency Range 33-36 Zout Input Output Return Loss Output power gain compression Chip size Substrate Thickness Bond dimensions
Description
Rockwell KaLNA3S.04R PHEMT noise amplifier that operates from GHz. This stage amplifier nominal gain with nominal noise figure gain compression output power minimum. This MMIC unconditionally stable. Absolute Maximum Ratings
Symbol
total total base
Parameters/Conditions
Drain Supply Voltage Gate Supply Voltage Total drain current Total gate current input power Operating channel temperature assembly temperature storage temperature Maximum base plate temperature
Units
Volts Volts
-0.6
300*
minute maximum
Band w325
S21-gain [dB]
[dB]
02/18/00
Preliminary Specifications Subject Change
kalna3s.4r page
Band Noise Amplifier
Electrical Specifications Conditions base source load
Symbol
total Frequency Gain** Gain P1dB(note Isolation NF(note
Parameters/Conditions
Drain Supply Voltage Gate Supply Voltage Total drain current Vgs) Specified Bandwidth edges Small signal Small signal gain flatness Power output gain compression Input port return loss Output port return loss Reverse isolation Noise figure
-0.6
-0.2
Units
Volts Volts
dB/GHz
(Note These measurements will carried sampled basis. random representative sample dies mounted tested noise figure gain compression.
Each fully tested S-parameters measured. Full 2-port S-parameter data individual will supplied. dies will pass visual inspection dictated rules contained Section General Notes Rockwell PHEMT Products (applicable sections MIL-I-45208) Every unique identifier number on-chip complete traceability. conductive epoxy flux-less solder attach recommended. should attached electrically conductive surface complete ground paths. ground path inductance should minimized (<10 assure stability. front side metal compatible with thermo-sonic wire bonding. backside metal compatible with attach methods exceeding Tmax GaAs MMICs sensitive. Proper precautions should used when handling these devices. Front backside metal Gold.
(***)
Rockwell Science Center reserves right make improvements this device, including size reduction, while maintaining specifications. General Notes Rockwell PHEMT Products will supplied upon user's request addition inspection criteria will contain descriptions, biasing instructions, reliability data.
02/18/00
Preliminary Specifications Subject Change
kalna3s.4r page

KaLNA3S.04R*** MMIC Features Noise N.F. High Gain Gain (min)

Top Searches for this datasheet

Other recent searches