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HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL dV/dt IMMUNITY V/
Top Searches for this datasheetL6388 HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL dV/dt IMMUNITY V/nsec FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY:400 SOURCE,650 SINK SWITCHING TIMES 70/40 nsec RISE/FALL WITH LOAD 3.3V, CMOS/TTL INPUTS COMPARATORS WITH HYSTERESYS PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS PHASE WITH INPUTS DEAD TIME INTERLOCKING FUNCTION Figure Package DIP8 Table Order Codes Part Number L6388 L6388D L6388D013TR Package DIP8 Tape Reel Driver structure that enables drive independent referenced Channel Power IGBT. Upper (Floating) Section enabled work with voltage Rail 600V. Logic Inputs CMOS/TTL compatible ease interfacing with controlling devices. DESCRIPTION L6388 high-voltage device, manufactured with BCD"OFF-LINE" technology. Figure Block Diagram BOOTSTRAP DRIVER Vboot H.V. Cboot DETECTION LOGIC DETECTION DRIVER SHOOT THROUGH PREVENTION LEVEL SHIFTER DRIVER LOAD 2005 Rev. L6388 Table Absolute Maximum Rating Symbol Vout Vboot Vhvg Vlvg dVout/dt Ptot Tstg Output Voltage Supply Voltage Floating Supply Voltage High Side Gate Output Voltage Side Gate Output Voltage Logic Input Voltage Allowed Output Slew Rate Total Power Dissipation 85°C) Junction Temperature Storage Temperature Parameter Value Vboot Vboot -0.3 +0.3 -0.3 +0.3 Unit V/ns Note: immunity pins guaranteed 900V (Human Body Model) Figure Connection (Top view) D97IN517A Vboot Table Description Name Vboot Type Side Driver Logic Input High Side Driver Logic Input Voltage Power Supply Ground Side Driver Output High Side Driver Floating Reference High Side Driver Output Bootstrap Supply Voltage Function circuit guarantees 0.3V maximum Isink 10mA). This allows omit "bleeder" resistor connected between gate source external MOSFET normally used hold low. Table Thermal Data Symbol j-amb Parameter Thermal Resistance Junction Ambient Minidip Unit °C/W L6388 Table Recommended Operating Conditions Symbol Vout Parameter Output Voltage Floating Supply Voltage Switching Frequency Supply Voltage Junction Temperature HVG,LVG load Test Condition Min. Note Note Typ. Max. Unit Note condition Vboot Vout guaranteed, Vout range from 580V (*): Vboot Vout Table Electrical Characteristics (Vcc 15V; 25°C) Symbol Parameter Test Condition Min. Typ. Max. Unit OPERATION toff High/Low Side Driver Turn-On Propagation Delay High/Low Side Driver Turn-Off Propagation Delay Rise Time Fall Time Dead Time Vout Vout 1000pF 1000pF OPERATION Supply Voltage Section Vccth1 Vccth2 Vcchys Iqccu Iqcc Rdson Turn Threshold Turn Threshold Hysteresis Undervoltage Quiescent Supply Current Quiescent Current 10.1 Bootstrap Driver Resistance (**) Bootstrapped Supply Voltage Section VBSth1 VBSth2 VBShys IQBS Turn Threshold Turn Threshold Hysteresis Quiescent Current High Voltage Leakage Current Vhvg Vout Vboot 600V 10.5 High/Low Side Driver Source Short Circuit Current Sink Short Circuit Current 10µs) 10µs) L6388 Table Electrical Characteristics (continued) (Vcc 15V; 25°C) Symbol Parameter Test Condition Min. Typ. Max. Unit Logic Inputs Level Logic Input Voltage High Level Logic Input Voltage High Level Logic Input Current Level Logic Input Current (**) RDSON tested following way: DSON CCBOOT1 CCBOOT2 where current when VCBOOT VCBOOT1, when VCBOOT VCBOOT2. CBOOT1 CBOOT2 Figure Dead Time Waveforms Definitions Figure Propagation Delay Waveform Definitions Interlocking function toff toff L6388 INPUT LOGIC Input logic provided with interlocking circuitry which avoids outputs (LVG, HVG) active same time when both logic input pins (LIN, HIN) high logic level. addition, prevent cross conduction external MOSFETs, after each output turned-off other output cannot turned-on before certain amount time (DT) (see Figure Figure Typical Rise Fall Times Load Capacitance time (nsec) D99IN1054 Figure Quiescent Current Supply Voltage (µA) D99IN1055 (nF) both high side buffers @25°C Tamb VS(V) BOOTSTRAP DRIVER bootstrap circuitry needed supply high voltage section. This function normally accomplished high voltage fast recovery diode (fig. 8a). L6388 patented integrated structure replaces external diode. realized high voltage DMOS, driven synchronously with side driver (LVG), with series diode, shown fig. internal charge pump (fig. provides DMOS driving voltage diode connected series DMOS been added avoid undesirable turn CBOOT selection charging choose proper CBOOT value external seen equivalent capacitor. This capacitor CEXT related total gate charge gate gate ratio between capacitors CEXT CBOOT proportional cyclical voltage loss CBOOT>>>CEXT e.g.: Qgate 30nC Vgate 10V, CEXT 3nF. With CBOOT 100nF drop would 300mV. supplied long time, CBOOT selection take into account also leakage losses. e.g.: steady state consumption lower than 200µA, 5ms, CBOOT supply CEXT. This charge capacitor means voltage drop internal bootstrap driver gives great advantages: external fast recovery diode avoided usually great leakage current). This structure work only VOUT close lower) meanwhile charging time (Tcharge) CBOOT time which both conditions fulfilled L6388 long enough charge capacitor. bootstrap driver introduces voltage drop DMOS RDSON (typical value: Ohm). frequency this drop neglected. Anyway increasing frequency must taken account. following equation useful compute drop bootstrap DMOS: gate drop dson drop dson where Qgate gate charge external power MOS, Rdson resistance bootstrap DMOS, Tcharge charging time bootstrap capacitor. example: using power with total gate charge 30nC drop bootstrap DMOS about Tcharge 5µs. fact: 30nC drop 0.8V Vdrop taken into account when voltage drop CBOOT calculated: this drop high, circuit topology doesn't allow sufficient charging time, external diode used. Figure Bootstrap Driver. DBOOT VBOOT H.V. CBOOT VOUT LOAD VBOOT H.V. CBOOT VOUT LOAD L6388 Figure VBOOT Turn Threshold Temperature Vccth2(V) VBSth1(V) Typ. Figure Turn Threshold Temperature Typ. (°C) (°C) Figure VBOOT Turn Threshold Temperature Figure Output Source Current Temperature 1000 current (mA) Typ. VBSth2(V) Typ. (°C) Figure Turn Threshold Temperature Figure Output Sink Current Temperature 1000 current (mA) Vccth1(V) (°C) Typ. Typ. (°C) L6388 Figure DIP8 Mechanical Data Package Dimensions DIM. MIN. 3.18 7.95 2.54 7.62 7.62 5.08 3.81 1.52 0.125 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 0.313 0.100 0.300 0.300 0.260 0.200 0.150 0.060 TYP. 3.32 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 MAX. MIN. TYP. 0.131 MAX. inch OUTLINE MECHANICAL DATA DIP-8 L6388 Figure Mechanical Data Package Dimensions DIM. MIN. 5.80 0.25 0.40 1.35 0.10 1.10 0.33 0.19 4.80 3.80 1.27 6.20 0.50 1.27 0.228 0.010 0.016 TYP. MAX. 1.75 0.25 1.65 0.51 0.25 5.00 4.00 MIN. 0.053 0.004 0.043 0.013 0.007 0.189 0.15 0.050 0.244 0.020 0.050 TYP. MAX. 0.069 0.010 0.065 0.020 0.010 0.197 0.157 inch OUTLINE MECHANICAL DATA (min.), (max.) 0.10 0.004 Note: Dimensions does include mold flash, protrusions gate burrs. Mold flash, potrusions gate burrs shall exceed 0.15mm (.006inch) total (both side). SO-8 0016023 L6388 Table Revision History Date January 2005 2005 Revision First Issue Changed from Preliminary Data Final Description Changes 10/1 L6388 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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