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HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL dV/dt IMMUNITY V/


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L6388
HIGH-VOLTAGE HIGH SIDE DRIVER
HIGH VOLTAGE RAIL dV/dt IMMUNITY V/nsec FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY:400 SOURCE,650 SINK SWITCHING TIMES 70/40 nsec RISE/FALL WITH LOAD 3.3V, CMOS/TTL INPUTS COMPARATORS WITH HYSTERESYS PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS PHASE WITH INPUTS DEAD TIME INTERLOCKING FUNCTION
Figure Package
DIP8
Table Order Codes
Part Number L6388 L6388D L6388D013TR Package DIP8 Tape Reel
Driver structure that enables drive independent referenced Channel Power IGBT. Upper (Floating) Section enabled work with voltage Rail 600V. Logic Inputs CMOS/TTL compatible ease interfacing with controlling devices.
DESCRIPTION
L6388 high-voltage device, manufactured with BCD"OFF-LINE" technology. Figure Block Diagram
BOOTSTRAP DRIVER
Vboot H.V. Cboot
DETECTION LOGIC
DETECTION
DRIVER
SHOOT THROUGH PREVENTION
LEVEL SHIFTER
DRIVER LOAD
2005
Rev.
L6388
Table Absolute Maximum Rating
Symbol Vout Vboot Vhvg Vlvg dVout/dt Ptot Tstg Output Voltage Supply Voltage Floating Supply Voltage High Side Gate Output Voltage Side Gate Output Voltage Logic Input Voltage Allowed Output Slew Rate Total Power Dissipation 85°C) Junction Temperature Storage Temperature Parameter Value Vboot Vboot -0.3 +0.3 -0.3 +0.3 Unit V/ns
Note: immunity pins guaranteed 900V (Human Body Model)
Figure Connection (Top view)
D97IN517A
Vboot
Table Description
Name Vboot Type Side Driver Logic Input High Side Driver Logic Input Voltage Power Supply Ground Side Driver Output High Side Driver Floating Reference High Side Driver Output Bootstrap Supply Voltage Function
circuit guarantees 0.3V maximum Isink 10mA). This allows omit "bleeder" resistor connected between gate source external MOSFET normally used hold low.
Table Thermal Data
Symbol j-amb Parameter Thermal Resistance Junction Ambient Minidip Unit °C/W
L6388
Table Recommended Operating Conditions
Symbol Vout Parameter Output Voltage Floating Supply Voltage Switching Frequency Supply Voltage Junction Temperature HVG,LVG load Test Condition Min. Note Note Typ. Max. Unit
Note condition Vboot Vout guaranteed, Vout range from 580V (*): Vboot Vout
Table Electrical Characteristics (Vcc 15V; 25°C)
Symbol Parameter Test Condition Min. Typ. Max. Unit
OPERATION
toff High/Low Side Driver Turn-On Propagation Delay High/Low Side Driver Turn-Off Propagation Delay Rise Time Fall Time Dead Time Vout Vout 1000pF 1000pF
OPERATION
Supply Voltage Section Vccth1 Vccth2 Vcchys Iqccu Iqcc Rdson Turn Threshold Turn Threshold Hysteresis Undervoltage Quiescent Supply Current Quiescent Current 10.1
Bootstrap Driver Resistance (**)
Bootstrapped Supply Voltage Section VBSth1 VBSth2 VBShys IQBS Turn Threshold Turn Threshold Hysteresis Quiescent Current High Voltage Leakage Current Vhvg Vout Vboot 600V 10.5
High/Low Side Driver Source Short Circuit Current Sink Short Circuit Current 10µs) 10µs)
L6388
Table Electrical Characteristics (continued) (Vcc 15V; 25°C)
Symbol Parameter Test Condition Min. Typ. Max. Unit
Logic Inputs Level Logic Input Voltage High Level Logic Input Voltage High Level Logic Input Current Level Logic Input Current
(**) RDSON tested following way: DSON CCBOOT1 CCBOOT2 where current when VCBOOT VCBOOT1, when VCBOOT VCBOOT2.
CBOOT1 CBOOT2
Figure Dead Time Waveforms Definitions
Figure Propagation Delay Waveform Definitions
Interlocking function
toff
toff
L6388
INPUT LOGIC
Input logic provided with interlocking circuitry which avoids outputs (LVG, HVG) active same time when both logic input pins (LIN, HIN) high logic level. addition, prevent cross conduction external MOSFETs, after each output turned-off other output cannot turned-on before certain amount time (DT) (see Figure Figure Typical Rise Fall Times Load Capacitance
time (nsec)
D99IN1054
Figure Quiescent Current Supply Voltage
(µA)
D99IN1055
(nF) both high side buffers @25°C Tamb
VS(V)
BOOTSTRAP DRIVER bootstrap circuitry needed supply high voltage section. This function normally accomplished high voltage fast recovery diode (fig. 8a). L6388 patented integrated structure replaces external diode. realized high voltage DMOS, driven synchronously with side driver (LVG), with series diode, shown fig. internal charge pump (fig. provides DMOS driving voltage diode connected series DMOS been added avoid undesirable turn CBOOT selection charging choose proper CBOOT value external seen equivalent capacitor. This capacitor CEXT related total gate charge gate gate ratio between capacitors CEXT CBOOT proportional cyclical voltage loss CBOOT>>>CEXT e.g.: Qgate 30nC Vgate 10V, CEXT 3nF. With CBOOT 100nF drop would 300mV. supplied long time, CBOOT selection take into account also leakage losses. e.g.: steady state consumption lower than 200µA, 5ms, CBOOT supply CEXT. This charge capacitor means voltage drop internal bootstrap driver gives great advantages: external fast recovery diode avoided usually great leakage current). This structure work only VOUT close lower) meanwhile charging time (Tcharge) CBOOT time which both conditions fulfilled
L6388
long enough charge capacitor. bootstrap driver introduces voltage drop DMOS RDSON (typical value: Ohm). frequency this drop neglected. Anyway increasing frequency must taken account. following equation useful compute drop bootstrap DMOS: gate drop dson drop dson where Qgate gate charge external power MOS, Rdson resistance bootstrap DMOS, Tcharge charging time bootstrap capacitor. example: using power with total gate charge 30nC drop bootstrap DMOS about Tcharge 5µs. fact: 30nC drop 0.8V Vdrop taken into account when voltage drop CBOOT calculated: this drop high, circuit topology doesn't allow sufficient charging time, external diode used. Figure Bootstrap Driver.
DBOOT
VBOOT H.V.
CBOOT VOUT LOAD
VBOOT H.V.
CBOOT VOUT LOAD
L6388
Figure VBOOT Turn Threshold Temperature
Vccth2(V)
VBSth1(V)
Typ.
Figure Turn Threshold Temperature
Typ.
(°C)
(°C)
Figure VBOOT Turn Threshold Temperature
Figure Output Source Current Temperature
1000
current (mA)
Typ.
VBSth2(V)
Typ.
(°C)
Figure Turn Threshold Temperature
Figure Output Sink Current Temperature
1000
current (mA)
Vccth1(V)
(°C)
Typ.
Typ.
(°C)
L6388
Figure DIP8 Mechanical Data Package Dimensions
DIM. MIN. 3.18 7.95 2.54 7.62 7.62 5.08 3.81 1.52 0.125 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 0.313 0.100 0.300 0.300 0.260 0.200 0.150 0.060 TYP. 3.32 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 MAX. MIN. TYP. 0.131 MAX. inch
OUTLINE MECHANICAL DATA
DIP-8
L6388
Figure Mechanical Data Package Dimensions
DIM. MIN. 5.80 0.25 0.40 1.35 0.10 1.10 0.33 0.19 4.80 3.80 1.27 6.20 0.50 1.27 0.228 0.010 0.016 TYP. MAX. 1.75 0.25 1.65 0.51 0.25 5.00 4.00 MIN. 0.053 0.004 0.043 0.013 0.007 0.189 0.15 0.050 0.244 0.020 0.050 TYP. MAX. 0.069 0.010 0.065 0.020 0.010 0.197 0.157 inch
OUTLINE MECHANICAL DATA
(min.), (max.) 0.10 0.004
Note: Dimensions does include mold flash, protrusions gate burrs. Mold flash, potrusions gate burrs shall exceed 0.15mm (.006inch) total (both side).
SO-8
0016023
L6388
Table Revision History
Date January 2005 2005 Revision First Issue Changed from Preliminary Data Final Description Changes
10/1
L6388
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics. other names property their respective owners 2005 STMicroelectronics rights reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America www.st.com
11/1

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