Description: NTE2382 power N-Channel TO220 type package designed high

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Description: NTE2382 power N-Channel TO220 type package designed high

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NTE2382 MOSFET N-Channel Enhancement Mode, High Speed Switch (Compl NTE2383)
Description: NTE2382 power N-Channel TO220 type package designed high voltage, high speed power switching applications such switching regulators, converters, solenoid, relay drivers. Features: Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Lower Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Absolute Maximim Ratings: Drain-Source Voltage (Note VDSS 100V Drain-Gate Voltage (RGS Note VDGR 100V Gate-Source Voltage, ±20V Continuous Drain Current, +25°C 9.2A +100°C 6.5A Drain Current, Pulsed (Note Gate Current, Pulsed, ±1.5A Single Pulsed Avalanvhe Energy (Note 36mJ Avalanche Current, 9.2A Total Power Dissipation +25°C), Derate Above 25°C 0.4W/°C Operating Junction Temperature Range, Topr -55° +150°C Storage Temperature Range, Tstg -55° +150°C Thermal Resistance, Junction-to-Ambient, RthJA 62.5°C/W Thermal Resistance, Junction-to-Case, RthJC 2.5°C/W Thermal Resistance, Case-to-Sink (Note RthCS 0.5°C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), +300°C Note Note Note Note Note +25° +150°C Pulse Test: Pulse Width 300µs, Duty Cycle Repetitive rating: Pulse width limited max. junction temperature. 64mH, 25V, Starting +25°C. Mounting surface flat, smooth, greased.
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Symbol IDSS IGSS IGSS VGS(th) rDS(on) Ciss Coss Crss td(on) td(off) Note +25°C, 9.2A, Note +25°C, 9.2A, dIF/dt 100A/µs 10V, 80V, 9.2A, Gate charge essentially independent operating temperature 50V, 9.2A, MOSFET switching times essentially independent operating temperature Test Conditions 100V, 80V, +125°C VGS, 0.25mA 10V, 4.6A, Note 50V, 4.6A, Note 25V, 1MHz 0.25 -100 0.27 13.0 Unit mhos V(BR)DSS 0.25mA
Source-Drain Diode Ratings Characteristics
Note Pulse Test: Pulse Width 300µs, Duty Cycle Note Repetitive rating: Pulse width limited max. junction temperature.
.420 (10.67)
.110 (2.79)
.147 (3.75)
.500 (12.7)
.250 (6.35) .500 (12.7) .070 (1.78)
Gate .100 (2.54)
Source Drain/Tab

Description: NTE2382 power N-Channel TO220 type package designed high

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