Description: NTE2378 N-Channel Enhancement Mode Power Field Effect Tra

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Description: NTE2378 N-Channel Enhancement Mode Power Field Effect Tra

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NTE2378 MOSFET N-Channel Enhancement Mode, High Speed Switch
Description: NTE2378 N-Channel Enhancement Mode Power Field Effect Transistor. Easy drive very fast switching times make this device ideal high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, motor speed control. Features: ON-State Resistance Very High-Speed Switching Converters Absolute Maximum Ratings: +25°C) Drain-Source Voltage, VDSS 900V Gate-Source Voltage, VGSS ±30V Drain Current, Pulsed Drain Current (Note Allowable Power Dissipation +25°C), 120W Maximum Channel Temperature, +150°C Storage Temperature Range, Tstg -55° +150°C Note Pulse Width 10µs, Duty Cycle Note careful handling NTE2378 because protection diode between gate source. Electrical Characteristics: +25°C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-Source Leakage Current Cutoff Voltage Static Drain-Source Resistance Forward Transconductance Symbol Test Conditions ±100 Unit V(BR)DSS 1mA, IDSS IGSS VGS(off) RDS(on) 900V ±30V 10V, 10V, 20V,
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) 200V, 10V, 20V, 1MHz Test Conditions Unit
.190 (4.82)
.615 (15.62)
.787 (20.0)
.591 (15.02)
.126 (3.22)
.787 (20.0)
.215 (5.47)

Description: NTE2378 N-Channel Enhancement Mode Power Field Effect Tra

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