Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switchi

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Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switchi

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NTE2373 MOSFET P-Ch, Enhancement Mode High Speed Switch
Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease Paralleling Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS 10V), +25°C +100°C 6.8A Pulsed Drain Current (Note Power Dissipation +25°C), 125W Derate Linearly Above 25°C 1.0W/°C Gate-to-Source Voltage, Single Pulse Avalanche Energy (Note 700mJ Avalanche Current (Note Repetitive Avalanche Energy (Note 13mJ Peak Diode Recovery dv/dt (Note dv/dt 5.0V/ns Operating Junction Temperature Range, -55° +150°C Storage Temperature Range, Tstg -55° +150°C Lead Temperature (During Soldering, 1.6mm from case 10sec), +300°C Mounting Torque (6-32 Screw) lbfin (1.1Nm) Thermal Resistance, Junction-to-Case, RthJC 1.0°C/W Thermal Resistance, Junction-to-Ambient, RthJA 62°C/W Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS 0.5°C/W Note Note Note Note Repetitive rating; pulse width limited maximum junction temperature. 50V, starting +25°C, 8.7mH, 11A, di/dt 150A/µs, V(BR)DSS, +150°C Pules Width 300µs, Duty Cycle
Electrical Characteristics: +25°C unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Symbol V(BR)DSS Test Conditions 250µA 100V, 11A, 9.1, 8.6, Note Between lead, .250in. (6.0) from package center contact 25V, 1MHz 0.20 1200 0.50 -100 Unit V/°C mhos
V(BR)DSS Reference +25°C, RDS(on) VGS(th) IDSS IGSS IGSS td(on) td(off) Ciss Coss Crss 10V, 6.6A, Note VGS, 250µA 50V, 6.6A, Note4 200V, 160V, +125°C -20V 11A, 160V, 10V, Note
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
Source-Drain Ratings Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Symbol Note +25°C, 11A, Note +25°C, 11A, di/dt 100A/µs, Note Test Conditions Unit
Intrinsic turn-on time neglegible (turn-on dominated LS+LD)
Note Repetitive rating; pulse width limited maximum junction temperature. Note Pulse width 300µs; duty cycle
.420 (10.67)
.110 (2.79)
.147 (3.75)
.500 (12.7)
.250 (6.35) .500 (12.7) .070 (1.78)
Gate .100 (2.54)
Source Drain/Tab

Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switchi

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