Description: NTE249 (NPN) NTE250 (PNP) silicon complementary Darlingto
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NTE249 (NPN) NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: NTE249 (NPN) NTE250 (PNP) silicon complementary Darlington transistors type case designed output devices complementary general purpose amplifier applications. Features: High Current Gain: 3500 Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 100V Collector-Base Voltage, 100V Emitter-Base Voltage, Collector Current, Base Current, 500mA Total Power Dissipation +25°C), 150W Derate Above 25°C 0.857W/°C Operating Junction Temperature Range, -55° +200°C Storage Temperature Range, Tstg -55° +200°C Thermal Resistance, Junction-to-Case, RthJC 1.17°C/W Electrical Characteristics: +25°C unless otherwise specified)
Parameter Characteristics Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current V(BR)CEO 100mA, Note ICEO ICER Emitter Cutoff Current IEBO 50V, 100V, 100V, +150°C Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Characteristics (Note Current Gain Collector-Emitter Saturation Voltage VCE(sat) 10A, 40mA 16A, 80mA Base-Emitter Voltage 1000 Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle
NTE249
.350 (8.89) .135 (3.45) .875 (22.2) Seating Plane
.312 (7.93)
.040 (1.02)
Emitter
1.187 (30.16) .665 (16.9)
NTE250
.215 (5.45)
.430 (10.92) .188 (4.8)
Base
.525 (13.35) Collector/Case
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