Scope 1-1. This specification applies channel silicon MOSFET chips, De
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N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE PM-0107
Scope 1-1. This specification applies channel silicon MOSFET chips, Device PM-0107 1-2. Built-in protection diode Structure 2-1. Planar type 2-2. Electrodes Source Aluminum alloy Gate Aluminum alloy Drain Gold alloy Size 3-1. Chip size mils mils (1.220 1.220 3-2. Chip thickness 1.5mils 0.305± 0.038mm). 3-3. size Source 25.1 mils 12.8 mils (0.638 0.326mm mils mils (0.180 0.180 Gate 3-4. Pattern drawing Refer attached drawing. Absolute maximum rating
Parameter Continuous drain current vGS=5v Drain-source Voltage Gate-source Voltage Operating junction storage temperature range Symbol Rating -40to+150 Unit
Pattern drawing
ID(m) VDSS TSTG
Source
Gate
Electrical characteristics
Parameter Drain source breakdown voltage Gate threshold voltage Gate source leakage current Drain source leakage current Drain source resistance state drain current Diode forward voltage drop Symbol Condition 100uA =1mA ±10V 400V 150mA 200mA Min. 0.07 0.86 Typ. Max. Unit
Drain
BVDSS VGS(th) IGSS IDSS RDS(on) ID(on)
Gate
Body Diode
Gate Protection Diode Source
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OPTO TECH
Since 1983
Tel: 886-3-5777481 Fax: 886-3-5795718 http://www.opto.com.tw
PM-0107
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