Scope This specification applies silicon photodiode chips, Device PD-3
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SILICON PHOTODIODE CHIPS DEVICE PD-3090
Scope This specification applies silicon photodiode chips, Device PD-3090 Structure 2-1. Planar type diode. 2-2. Electrodes side Anode Aluminum alloy Back side Cathode Gold alloy. Size 3-1. Chip size mils mils (2.250 2.250 3-2. Chip thickness 1.5mils 0.305± 0.038mm). 3-3. Active area mils mils (2.000 2.000 3-4. Bonding (Anode) mils mils 0.165 3-5. Pattern drawing refer attached drawing. Electro-optical characteristics
Parameter Reverse dark Current Reverse breakdown voltage Open circuit Voltage Short circuit Current Reverse light Current Total Capacitance Turn-on/ Turn-off Time Symbol Condition VR=10v H=0mw/ IR=100uA H=0mw/cm CT=2870°k H=5mw/cm =2870°k H=5mw/cm CT=2870°k H=5mw/cm H=0mw/cm f=1MHZ VR=2V RL=200 =905nm Min. Typ. Max. Unit
Active Area Anode PATTERN DRAWING UNIT:mil
V(BR)R
Anode A.R. Coating Oxide
Cathode
ton/toff
250/550
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PD-3090
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