2SD669 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation P
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TO-126C Plastic-Encapsulate Transistors
2SD669
TRANSISTOR (NPN) TO-126C
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER COLLECTOR BASE
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 VCE=5V, IC=150mA VCE=5V, IC=500mA IC=500mA, IB=50mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz
CLASSIFICATION hFE(1) Rank Range 60-120 100-200 160-320
Typical Characteristics
2SD669
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