2SC3807 FEATURES Power dissipation PCM: 1.25 (Tamb=25) BASE
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TO-126C Plastic-Encapsulate Transistors
2SC3807
FEATURES Power dissipation PCM: 1.25 (Tamb=25)
BASE COLLECTOR EMITTER
TRANSISTOR (NPN) TO-126C
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Fall time Storage time VCE(sat) VBE(sat) VCE=5V, IC=1A IC=1A, IB=20mA IC=1A, IB=20mA
unless otherwise specified)
Test conditions UNIT
Ic=10µA, IE=0 Ic=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA
1.35
3200
VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz Vcc=10V, Ic=0.7A IB1=-IB2=0.1A
Typical Characteristics
2SC3807
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