2SB1658 FEATURES Power dissipation PCM: (Tamb=25) EMITTER CO
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TO-126 Plastic-Encapsulate Transistors
2SB1658
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (PNP) TO-126
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Test
unless otherwise specified)
conditions UNIT
Ic=-0.1mA, IE=0 Ic=-1mA, IB=0 IE=-0.1m IC=0 VCB=-30V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-1A VCE=-2V, IC=-4A IC=-1A, IB=-50mA
-0.1 -0.1 -0.15 -0.25 -0.5 -1.5
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB=-100mA IC=-4A, IB=-200mA
Base-emitter saturation voltage Transition frequency Collector output capacitance
VBE(sat)
IC=-1A, IB=-100mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz
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