BD433/435/437 FEATURES Power dissipation PCM: 1.25 (Tamb=25)
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TO-126 Plastic-Encapsulate Transistors
BD433/435/437
FEATURES Power dissipation PCM: 1.25 (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (NPN) TO-126
Collector current ICM: Collector-base voltage BD433 V(BR)CBO:
BD435 BD437
Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Symbol
unless otherwise specified)
Test conditions BD433 UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
BD435 BD437 BD433
Collector-emitter breakdown voltage
V(BR)CEO
Ic=100mA, IB=0 IE=100µA, IC=0 VCB=22V, IE=0
BD435 BD437
Emitter-base breakdown voltage
V(BR)EBO
BD433 BD435 BD437 BD433 BD435 BD437
Collector cut-off current
ICBO
VCB=32V, IE=0 VCB=45V, IE=0 VCE=22V, IE=0
Collector cut-off current
ICEO
VCE=32V, IE=0 VCE=45V, IE=0 VEB=5V, IE=0 VCE=1V, IC=500mA VCE=5V, IC=10mA VCE=1V, IC=2A IC=2A, IB=0.2A VCE=1V, IC=2A
Emitter cut-off current
IEBO hFE(1) hFE(2)
BD433/BD435 BD437 BD433/BD435 BD437 BD433/BD435 BD437 BD433/BD435 BD437
current gain
hFE(3)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage Transition frequency
VCE=1V, IC=250mA
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