2SD313 TRANSISTOR (NPN) TO-220 BASE COLLECTOR FEAT
|
|
|
Top Searches for this datasheet
TO-220 Plastic-Encapsulate Transistors
2SD313
TRANSISTOR (NPN)
TO-220
BASE COLLECTOR
FEATURES Power dissipation PCM: 1.75 (Tamb=25)
EMITTER
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VCE=2V, IC=0.1A IC=2A, IB=200mA VCE=2V, IC=1A VCE=5V, IC=500mA VCB=10V, IE=0,f=1MHz
unless otherwise specified)
Test conditions UNIT
Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VCE=60V, IE=0 VEB=4V, IC=0 VCE=2V, IC=1A
CLASSIFICATION hFE(1) Rank Range 40-80 60-120 100-200 160-320
Other recent searches
UM-1 - UM-1 UM-1 Datasheet
STH6N100 - STH6N100 STH6N100 Datasheet
STH6N100FI - STH6N100FI STH6N100FI Datasheet
MSC8102 - MSC8102 MSC8102 Datasheet
GBU1504 - GBU1504 GBU1504 Datasheet
GBU1510 - GBU1510 GBU1510 Datasheet
CS42526 - CS42526 CS42526 Datasheet
2SJ601 - 2SJ601 2SJ601 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
