2SC3420 FEATURES Power dissipation PCM: (Tamb=25) EMITTER CO
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TO-126C Plastic-Encapsulate Transistors
2SC3420
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (NPN) TO-126C
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VCE=2V, IC=4A IC=4A, IB=0.1A VCE=2V, IC=4A VCE=2V, IC=0.5A
unless otherwise specified)
Test conditions UNIT
Ic=100µA, IE=0 Ic=10mA, IB=0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=8V, IC=0 VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
CLASSIFICATION hFE(1) Rank Range Marking 140-240 200-400 300-600
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