2SB1185 FEATURES Power dissipation PCM: (Tamb=25) TRANSISTOR
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TO-220 Plastic-Encapsulate Transistors
2SB1185
FEATURES Power dissipation PCM: (Tamb=25)
TRANSISTOR (PNP)
TO-220
BASE COLLECTOR EMITTER
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-0.5A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A, f=30MHz VCB=-10V, IE=0, f=1MHz
-1.5
CLASSIFICATION hFE(1) Rank Range Marking 60-120 100-200 160-320
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