BD233/235/237 TRANSISTOR (NPN) TO-126 EMITTER 1.25
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TO-126 Plastic-Encapsulate Transistors
BD233/235/237
TRANSISTOR (NPN) TO-126
EMITTER
1.25
(Tamb=25)
COLLECTOR BASE
Collector current ICM: Collector-base voltage BD233 V(BR)CBO: BD235: BD237: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage BD233 BD235 BD237 Collector-emitter breakdown voltage BD233 BD235 BD237 Emitter-base breakdown voltage Collector cut-off current BD233 BD235 BD237 Emitter cut-off current IEBO HFE(1) current gain HFE(2) Collector-emitter saturation voltage Transition frequency VCE(sat) ICBO V(BR)EBO V(BR)CEO V(BR)CBO
unless otherwise specified)
Test conditions 100µA, IE=0 10mA, IB=0 100µA, IC=0 VCB= 45V, IE=0 VCB= 60V, IE=0 VCB= 100V, IE=0 VEB= IC=0 VCE= IC=150mA VCE=2V, IC=1A, 100m VCE=10V, Ic=250mA =10MHz UNIT
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