2SD886 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation P
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TO-126C Plastic-Encapsulate Transistors
2SD886
TRANSISTOR (NPN) TO-126C
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER COLLECTOR BASE
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) VCE=2V, IC=1A IC=2A, IB=200mA IC=2A, IB=200mA
unless otherwise specified)
Test conditions UNIT
Ic=100µA, IE=0 Ic=5mA, IB=0 IE=100µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA
VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz
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