2SD2583 FEATURES Power dissipation PCM: (Tamb=25) EMITTER CO
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TO-126 Plastic-Encapsulate Transistors
2SD2583
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (NPN) TO-126
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) VCE=2V, IC=4A IC=1A, IB=50mA Collector-emitter saturation voltage VCE(sat) IC=2A, IB=100mA IC=4A, IB=200mA Base-emitter saturation voltage Transition frequency Collector output capacitance VBE(sat) IC=2A, IB=100mA
unless otherwise specified)
Test conditions UNIT
Ic=0.1mA, IE=0 Ic=1mA, IB=0 IE=0.1m IC=0 VCB=30V, IE=0 VEB=6V, IC=0 VCE=2V, IC=1A
0.15 0.25
VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz
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