BD136/BD138/BD140 FEATURES Power dissipation PCM: 1.25 (Tamb=25)
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TO-126 Plastic-Encapsulate Transistors
BD136/BD138/BD140
FEATURES Power dissipation PCM: 1.25 (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (PNP) TO-126
Collector current -1.5 ICM: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Symbol
unless otherwise specified)
Test conditions BD136 UNIT
-0.1 -0.5
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA, IE=0
BD138 BD140 BD136
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-30mA, IB=0
BD138 BD140
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
V(BR)EBO ICBO IEBO hFE(1)
IE=-100µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-5Ma BD136
current gain
hFE(2)
VCE=-2V, IC=-150mA
BD138 BD140
hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat)
VCE=-2V, IC=-500mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA
CLASSIFICATION hFE(2) Rank Range 40-100 63-160 100-250
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