BD135/BD137/BD139 FEATURES Power dissipation PCM: 1.25 (Tamb=25)
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TO-126 Plastic-Encapsulate Transistors
BD135/BD137/BD139
FEATURES Power dissipation PCM: 1.25 (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (NPN) TO-126
Collector current ICM: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Symbol
unless otherwise specified)
Test conditions BD135 UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
BD137 BD139 BD135
Collector-emitter breakdown voltage
V(BR)CEO
Ic=30mA, IB=0
BD137 BD139
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
V(BR)EBO ICBO IEBO hFE(1)
IE=100µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA BD135 VCE=2V, IC=150mA BD137/BD139
current gain
hFE(2)
hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat)
VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA
CLASSIFICATION hFE(2) Rank Range 40-100 63-160 100-250
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