2SD880 TRANSISTOR (NPN) TO-220 BASE COLLECTOR EMITTER
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TO-220 Plastic-Encapsulate Transistors
2SD880
TRANSISTOR (NPN)
TO-220
BASE COLLECTOR EMITTER
(Tamb=25)
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO (sat)
unless otherwise specified)
Test conditions IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs UNIT
Ic=100µA, IE=0 Ic=50mA, IB=0 100µA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=5V, IC=500mA IC=3A, IB=300mA IC=0.5A, VCE= VCE=5 IC=500mA VCE=10V, IE=0, f=1MHz
Collector output capacitance
Turn time Storage time Fall time
CLASSIFICATION Rank
Range 60-120 100-200 150-300
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