2SD2137 FEATURES Power dissipation PCM: (Tamb=25) TRANSISTOR
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TO-220 Plastic-Encapsulate Transistors
2SD2137
FEATURES Power dissipation PCM: (Tamb=25)
TRANSISTOR (NPN)
TO-220
BASE COLLECTOR EMITTER
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Turn-on time Switch time Storage time Fall time VCE(sat) VCE=4V, IC=3A IC=3A, IB=375mA VCE=4V, IC=3A VCE=5V, IC=0.2A, f=10MHz
unless otherwise specified)
Test conditions UNIT
Ic=1mA, IE=0 Ic=30mA, IB=0 IE=1mA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=4V, IC=1A
tstg
VCC=50V, IC=1A, IB1=0.1A, IB2=-0.1A
CLASSIFICATION hFE(1) Rank Range 70-150 120-250 160-320
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