2SD2136 FEATURES Power dissipation PCM: 1.25 (Tamb=25) EMITT
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TO-126 Plastic-Encapsulate Transistors
2SD2136
FEATURES Power dissipation PCM: 1.25 (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (NPN) TO-126
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Turn-on time Switch Time Storage time Fall time VCE(sat) VCE=4V, IC=3A IC=3A, IB=375mA VCE=4V, IC=3A VCE=5V, IC=0.1A, f=200MHz Test conditions UNIT
Ic=1mA, IE=0 Ic=30mA, IB=0 IE=1m IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=4V, IC=1A
tstg
IC=1A, IB1=0.1A, IB2=-0.1A
CLASSIFICATION hFE(1) Rank Range 40-90 70-150 120-250
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