2SB834 TRANSISTOR (PNP) TO-220 BASE COLLECTOR FEAT
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TO-220 Plastic-Encapsulate Transistors
2SB834
TRANSISTOR (PNP)
TO-220
BASE COLLECTOR
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on Time Storage Time Turn-off Time VCE(sat) VCE=-5V, IC=-3A IC=-3A, IB=-0.3A VCE=-5V, IC=-500mA VCE=-5V,I C=-500mA VCB=-10V, IE=0, f=1MHz
unless otherwise specified)
Test conditions UNIT
Ic=-100µA, IE=0 Ic=-50mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VEB=-7V, IC=0 VCE=-5V, IC=-500mA
-100 -100
tstg toff
VCC=-30V, Ic=-2A, IB!=IB2=-0.2A
CLASSIFICATION hFE(1) Rank Range 60-120 100-200
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