2SB649/2SB649A FEATURES Power dissipation PCM: (Tamb=25) EMI
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TO-126C Plastic-Encapsulate Transistors
2SB649/2SB649A
FEATURES Power dissipation PCM: (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (PNP) TO-126C
Collector current -1.5 ICM: Collector-base voltage V(BR)CBO -180 Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-1mA, IE=0 Ic=-10mA, IB=0 2SB649 2SB649A IE=-1mA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-150mA 2SB649 2SB649A VCE=-5V, IC=-500mA IC=-500mA, IB=-50mA VCE=-5V, IC=-150mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz
-180 -120 -160 -1.5
CLASSIFICATION hFE(1) Rank Range Marking 60-120 100-200 160-320
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