2SA1627 FEATURES Power dissipation 1.25 (Tamb=25) EMITTER CO
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TO-126C Plastic-Encapsulate Transistors
2SA1627
FEATURES Power dissipation 1.25 (Tamb=25)
EMITTER COLLECTOR BASE
TRANSISTOR (PNP) TO-126C
Collector current Collector-base voltage V(BR)CBO -600 Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn time Fall time Storage time VCE(sat) E(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-600V, IE=0 VEB=7V, IC=0 VCE=-5V, IC=-0.1A VCE=-5V, IC=-0.5A IC=-300mA, IB=-60mA IC=-300mA, IB=-60mA VCE=-10V, IC=-100mA VCB=-10V, IE=0, f=1MHz
-600 -600
-0.5 -1.2
IB1=-IB2=-0.1A, IC=-0.5A
VCC=-250V, RL=500
CLASSIFICATION hFE(1) Rank Range 30-60 40-80 60-120
Marking
Typical Characteristics
2SA1627
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