2SA1357 FEATURES Power dissipation (Tamb=25) EMITTER COLLECT
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TO-126C Plastic-Encapsulate Transistors
2SA1357
FEATURES Power dissipation (Tamb=25)
EMITTER COLLECTOR EMITTER
TRANSISTOR (PNP) TO-126C
Collector current Collector-base voltage V(BR)CBO Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-35V, IE=0 VEB=-8V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-4A, IB=-0.1A VCE=-2V, IC=-4A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz
-100 -100 -1.5
CLASSIFICATION hFE(1) Rank Range Marking 100-200 160-320
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