CMPSH-3/3A/3C/3S FEATURES Power dissipation SCHOTTKY DIODE
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SOT-23 Plastic-Encapsulate Diodes
CMPSH-3/3A/3C/3S
FEATURES Power dissipation
SCHOTTKY DIODE
SOT-23
(Tamb=25)
Forward Current Reverse Voltage Operating storage junction temperature range Tstg:
Unit:
CMPSH-3 Marking:
CMPSH-3A Marking:
CMPSH-3C Marking:
CMPSH-3S
Marking:
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Reverse breakdown voltage Symbol V(BR)
unless otherwise specified)
Test conditions 0.33 0.45 UNIT
100µA VR=25V
Reverse voltage
leakage current
VR=25V, TA=100 IF=2mA
Forward
voltage
IF=15mA IF=100mA
Diode
capacitance
Ctot
VR=0V, f=1MHz =IR=10mA IRR=1.0mA RL=100
Reverse recovery time
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