2SA1213 TRANSISTOR (PNP) FEATURES Power dissipation Collecto
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SOT-89 Plastic-Encapsulate Transistors
2SA1213
TRANSISTOR (PNP)
FEATURES Power dissipation Collector current Collector-base voltage V(BR)CBO
SOT-89
(Tamb=25) BASE COLLECTOR EMITTER
Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
unless otherwise specified)
Test conditions -0.1 -0.1 -0.5 -1.2 UNIT
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
Ic=-100µA IE=0 -10mA IB=0 IE=-100µA, IC=0 VCB=-50 IE=0 VEB=-5 IC=0
VCE=-2V, -0.5A VCE=-2V, IC=-1A, -0.05A IC=-1A, -0.05A
current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCEsat VBEsat
Transition frequency
VCE= -2V, IC=-0.5A
CLASSIFICATION Rank Range
70-140
120-240
Marking
NO,NY
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