2SB766 FEATURES Power dissipation COLLECTOR PCM: (Tamb=25) EMITTE
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SOT-89 Plastic-Encapsulate Transistors
2SB766
FEATURES Power dissipation COLLECTOR PCM: (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) VCE=-5V, IC=-1A
unless otherwise specified)
Test conditions UNIT
Ic=-10µA, IE=0 Ic=-2mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA
-0.1 -0.1
-0.2 -0.85
IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA, f=200MHz VCB=-10V, IE=0, f=1MHz
-0.4 -1.2
CLASSIFICATION hFE(1) Rank Range Marking 85-170 120-240 170-340
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