2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Co
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SOT-89 Plastic-Encapsulate Transistors
2SB1308
FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (PNP)
SOT-89
BASE
(Tamb=25)
COLLECTOR EMITTER
Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Measured using pulse current.
unless otherwise specified)
Test conditions -0.5 -0.5 -0.45 UNIT
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCEsat
Ic=-50µA IE=0 -1mA IB=0 IE=-50µA, IC=0 VCB=-20 IE=0 VEB=-5 IC=0
VCE=-2V, -0.5A IC=-1.5A, -0.15A VCE= -6V, IC=-50mA =30MHz
CLASSIFICATION Rank Range
82-180
120-270
180-390
Marking
BFP,BFQ,BFR
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