2SB1188 TRANSISTOR (PNP) SOT-89 BASE FEATURES Powe
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SOT-89 Plastic-Encapsulate Transistors
2SB1188
TRANSISTOR (PNP)
SOT-89
BASE
FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
(Tamb=25)
COLLECTOR EMITTER
Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCe(sat) Test conditions -0.8 UNIT
Ic=-50µA IE=0 -1mA IB=0 IE=-50µA, IC=0 VCB=-20 IE=0 VEB=-4 IC=0
VCE=-3V, -0.5A IC=-2A, -0.2A VCE=-5V, IC=-0.5A ,f=30MHz VCB=-10V, IE=0 ,f=1MHz
Measured using pulse current.
CLASSIFICATION Rank Range Marking
82-180
120-270
180-390
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