2SB1132 FEATURES Power dissipation PCM: (Tamb=25) EMITTER TR
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SOT-89 Plastic-Encapsulate Transistors
2SB1132
FEATURES Power dissipation PCM: (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE COLLECTOR
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test conditions UNIT
Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz
-0.5 -0.5 -0.5
CLASSIFICATION hFE(1) Rank Range Marking 82-180 120-270 180-390
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