2SB1119 FEATURES Power dissipation COLLECTOR PCM: (Tamb=25) EMITT
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SOT-89 Plastic-Encapsulate Transistors
2SB1119
FEATURES Power dissipation COLLECTOR PCM: (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE
Collector current ICM: Collector current (Pulse) ICP: Collector-base voltage V(BR)CBO: Operating storage junction temperature range TJ,Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(SAT) VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz Test conditions UNIT
Ic=-10µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA
-0.1 -0.1 -0.7 -1.2
CLASSIFICATION hFE(1) Rank Range Marking 100-200 140-280 200-400 280-560
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