2SA1740 FEATURES Power dissipation (Tamb=25) EMITTER TRANSIS
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SOT-89 Plastic-Encapsulate Transistors
2SA1740
FEATURES Power dissipation (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE COLLECTOR
Collector current -200 Collector-base voltage V(BR)CBO -400 Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-ON Time Turn-OFF Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-10µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-300V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-30V, IC=-10mA VCB=-30V, IE=0, f=1MHz VCC=-150V, Ic=-50mA, IB1=-IB2=-5mA
-400 -400 -0.1 -0.1 -0.8 0.25
toff
CLASSIFICATION hFE(1) Rank Range Marking 60-120 100-200
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