2SA1203 FEATURES Power dissipation COLLECTOR (Tamb=25) EMITTER
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SOT-89 Plastic-Encapsulate Transistors
2SA1203
FEATURES Power dissipation COLLECTOR (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE
Collector current -1.5 Collector-base voltage V(BR)CBO Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA IC=-1.5A, IB=-30mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0, f=1MHz
-0.1 -0.1
CLASSIFICATION hFE(1) Rank Range Marking 100-200 160-320
Typical Characteristics
2SA1203
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