2SA1201 FEATURES Power dissipation COLLECTOR (Tamb=25) EMITTER
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SOT-89 Plastic-Encapsulate Transistors
2SA1201
FEATURES Power dissipation COLLECTOR (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE
Collector current -800 Collector-base voltage V(BR)CBO -120 Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)
unless otherwise specified)
Test conditions UNIT
Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-120V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-5V, IC=-100mA VCB=-10V, IE=0, f=1MHz
-120 -120 -0.1 -0.1
CLASSIFICATION hFE(1) Rank Range Marking 80-160 120-240
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