BD233/235/237 TRANSISTOR TO-126 Power dissipation 1.25 WTamb
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TO-126 Plastic-Encapsulate Transistors
BD233/235/237
TRANSISTOR TO-126
Power dissipation 1.25 WTamb=25 Collector current Collector-base voltage V(BR)CBO BD233 BD235: BD237: Operating storage junction temperature range stg: +150 ELECTRICAL CHARACTERISTICSTamb=25
Parameter Collector-base breakdown voltage BD233 BD235 BD237 Collector-emitter breakdown voltage BD233 BD235 BD237 Emitter-base breakdown voltage Collector cut-off current BD233 BD235 BD237 Emitter cut-off current IEBO HFE1 current gain HFE2 Collector-emitter saturation voltage Transition frequency VCE(sat) VCE=2 ICBO
EMITTER 2.COLLECTOR 3.BASE
unless
Test
otherwise
conditions
specified
UNIT
Symbol V(BR)CB
100A IE=0
V(BR)CE
IB=0
V(BR)EB
100A IC=0 VCB= VCB= IE=0 IE=0
VCB= IE=0 VEB= IC=0
VCE= =150m
IC=1A, 100m VCE=10V Ic=250mA =10MHz
TO-126 Plastic-Encapsulate Transistors
TO-126 Plastic-Encapsulate Transistors TO-126 PACKAGE OUTLINE DIMENSIONS
Dimensions Millimeters 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 2.900 1.500 0.860 1.370 0.600 7.800 11.000 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126
Symbol
Dimensions Inches 0.114 0.059 0.034 0.054 0.024 0.307 0.433
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