TO-126 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES P
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3DD13003
TO-126 Plastic-Encapsulate Transistors Transistor(NPN)
FEATURES Power dissipation :1.25 (Tamb=25 Collector current :1.5 Collector-base voltage (BR)CBO :700
2.COLLECTOR 3.EMITTER 1.BASE
TO-126
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time Symbol Test conditions UNIT
(BR)CBO (BR)CEO (BR)EBO FE(1) FE(2) CE(sat)
(sat)
1000
1000 1000
1000
=0.5A =0.5mA =1000mA,I =250mA =1000mA,I =250mA =2000mA
=10V =100mA f=1MHz B2=0.2 =100mA
CLASSIFICATION FE(2)
Rank Range
8-15
15-20
20-25
25-30
30-35
35-40
TYPICAL CHARACTERISTICS
3DD13003
,COLLECTOR-EMITTER VOLTAGE(VOLTS)
j=150
hFE, CURRENT GAIN
Ic=0.1A
-0.3A
0.5A
1.5A
0.02
0.03
0.05 0.07
0.002
0.005 0.01
0.02
0.05
COLLECTOR CURRENT(AMP) Current Gain
BASE CURRENT(AMP) Collector Saturation Region
=(sat)@I =(sat)@I
0.35
VOLTAGE(VOLTS)
VOLTAGE(VOLTS)
0.25
j=55
=-55
0.15
0.05
0.02
0.03
0.05 0.07
0.02
0.03
0.05 0.07
Ic-COLLECTOR CURRENT-AMP Base-Emitter Voltage
Ic-COLLECTOR CURRENT(AMP) Collector-Emitter Saturation Region
COLLECTOR CURRENT-(uA)
=250V
=150
CAPACITANCE(pF)
FORWARD
REVERSE
-0.4
-0.2
+0.2
+0.4
+0.6
1000
VBE,BASE-EMITTER VOLTAGE(VOLTS) Collector Cutoff Region
VR,REVERSE VOLTAGE(VOLTS) Capacitance
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